| PART |
Description |
Maker |
| SPD502SMS SPD503SMS SPD504SMS SPD505SMS SPD506SMS |
5AMP 200-600VOLTS 40 nsec HYPER FAST RECTIFIER
|
Solid States Devices, Inc
|
| APT2X101D20J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 100; VR (V): 200; trr (nsec): 39; VF (V): 1.1; Qrr (nC): 840; 100 A, 200 V, SILICON, RECTIFIER DIODE
|
Microsemi, Corp.
|
| SDR952E SDR951E SDR950E |
60 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SHF1406 SHF1402 SHF1403 SHF1404 SHF1405 |
4 AMPS, 200-600 VOLTS 30 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SPD506 SPD502 SPD503 SPD504 SPD505 |
5 AMPS 200 - 600 VOLTS 40 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR622CTJ SDR621CTJ SDR620CTJ |
40 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST CENTERTAP RECTIFIER
|
Solid States Devices, Inc.
|
| SDR9102P SDR9100N SDR9100P SDR9101N SDR9101P SDR91 |
120 AMP 100- 200 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR640CT |
80 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST CENTERTAP RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SHM120F SHM140F SHM40F SHM60F SHM80F SHM100F SHM15 |
50-250 mA 1500-14000 VOLTS 150-200 nsec HIGH VOLTAGE RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR952CT_3 SDR951CT_3 SDR950CT_3 SDR950CT-3 SDR952 |
120 AMP 100 - 200 VOLTS 35 nsec HYPER FAST COMMONCATHODE CENTERTAP RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
